ENERGY-DISPERSIVE SPECTROSCOPIC METHODS APPLIED TO X-RAY DIFFRACTION IN SINGLE CRYSTALS.BURAS B; OLSEN JS; GERWARD L et al.1975; ACTA CRYSTALLOGR., A; DANEM.; DA. 1975; VOL. 31; NO 3; PP. 327-333; BIBL. 15 REF.Article

DETERMINATION OF INTERNAL STRAIN TENSORS BY ENERGY-DISPERSIVE X-RAY DIFFRACTION: RESULTS FOR SI USING THE 006 FORBIDDEN REFLECTIONCOUSINS CSG; GERWARD L; OLSEN JS et al.1982; J. APPL. CRYSTALLOGR.; ISSN 0021-8898; DNK; DA. 1982; VOL. 15; NO 2; PP. 154-159; BIBL. 17 REF.Article

INFLUENCE OF POLARIZATION OF THE INCIDENT BEAM ON INTEGRATED INTENSITIES IN X-RAY ENERGY-DISPERSIVE DIFFRACTOMETRY.OLSEN JS; BURAS B; JENSEN T et al.1978; ACTA CRYSTALLOGR., A; DANEM.; DA. 1978; VOL. 34; NO 1; PP. 84-87; BIBL. 12 REF.Article

DETERMINATION OF THE INTERNAL STRAIN TENSOR OF GERMANIUMCOUSINS CSG; GERWARD L; NIELSEN K et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 16; NO 21; PP. L651-L654; BIBL. 16 REF.Article

Surface effects in uniaxially stressed crystals: the internal-strain parameters of silicon and germanium revisedCOUSINS, C. S. G; GERWARD, L; OLSEN, J. S et al.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 1, pp 29-37, issn 0022-3719Article

The internal strain parameter of gallium arsenide measured by energy-dispersive x-ray diffractionCOUSINS, C. S. G; GERWARD, L; STAUN OLSEN, J et al.Semiconductor science and technology. 1989, Vol 4, Num 5, pp 333-339, issn 0268-1242, 7 p.Article